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jmnic product specification silicon pnp power transistors 2SB1185 description ? ? with to-220fa package ? low collector saturation votlage ? complement to type 2sd1762 applications ? for use in low frequency power amplifer applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector -emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -4.5 a t a =25 ?? 2.0 p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SB1185 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma; i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-50 | a; i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-50 | a; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 v v besat base-emitter saturation voltage i c =-2a ;i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-40v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 | a h fe dc current gain i c =-500ma ; v ce =-3v 60 320 f t transition frequency i c =-0.5a; v ce =-5v 70 mhz c ob collector output capacitance i e =0;f=1mhz ; v cb =-10v 50 pf ? h fe classifications d e f 60-120 100-200 160-320
jmnic product specification 3 silicon pnp power transistors 2SB1185 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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